A set of transgenic insertion stocks derived by TE mobilization using the P-element construct P{GawB}. The P{GawB} construct carries a w+mW.hs mini-white visible marker and Scer\GAL4 driver/enhancer trap sequences. The GAL4-UAS system is a binary system using Scer\GAL4, a yeast transcription activator protein gene, and Scer\UAS, the DNA binding site for the GAL4 protein. The P{GawB} construct acts as an enhancer trap: expression of the GAL4 is sensitive to enhancers in the genomic region of an insertion. When paired with a construct or insertion carrying a reporter gene downstream of Scer\UAS, the reporter gene is driven by and reflects the expression of the GAL4.
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Drives expression in non-dopaminergic neurons in the fan-shaped body, including the adult lateral fan-shaped body tangential-protocerebrum neuron ExFl1; and in a subset of 15 dopaminergic PAM neurons that innervate beta- and beta'-lobes of the adult mushroom body.
ScerGAL4NP6510 drives expression in a subset of 15 dopaminergic PAM neurons that innervate beta- and beta'-lobes of the adult mushroom body. Projections are observed both to the ipsilateral and the contralateral side. Neurons innervating the beta'-lobe show extensive dendritic arborization. Two to three labelled neurons innervating the fan-shaped body are non-dopaminergic. GRASP experiments show that ScerGAL4NP6510 expression is presynaptic in Kenyon cells of the mushroom body medial lobes.
The number of neurons detected by ScerGAL4NP6510 varied between hemispheres of the same brain.
ScerGAL4NP6510 drives expression in a subset of dopaminergic PAM neurons that innervate the mushroom body beta' lobe segment 2, beta lobe segment 1 and alpha lobe segment 1.
Approximately 7 fan-shaped F1 somata are labelled with ScerGAL4NP6510. Neurites from these cells converge into a bundle that runs dorsally and the posteriorly into the fan-shaped body.
Location 3L:17014767-17014768 refined by FlyBase alignment of dbGSS accession AG219003 to D. melanogaster arm Release_4 and heterochromatin Release_3.2b. Insertion orientation revised.